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SIR410DP-T1-GE3

Vishay Siliconix

Product No:

SIR410DP-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

-

Datasheet:

Description:

MOSFET N-CH 20V 35A PPAK SO-8

Quantity:

Delivery:

Payment:

In Stock : 1812

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.9785

    $0.9785

  • 10

    $0.8778

    $8.778

  • 100

    $0.684095

    $68.4095

  • 500

    $0.565136

    $282.568

  • 1000

    $0.446168

    $446.168

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SIR410DP-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number SIR410
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Power Dissipation (Max) 4.2W (Ta), 36W (Tc)
Supplier Device Package PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Drain to Source Voltage (Vdss) 20 V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)