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SIHP12N50C-E3

Vishay Siliconix

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SIHP12N50C-E3

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MOSFET N-CH 500V 12A TO220AB

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Mfr	Vishay Siliconix
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Base Product Number	SIHP12
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	555mOhm @ 4A, 10V
Power Dissipation (Max)	208W (Tc)
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Drain to Source Voltage (Vdss)	500 V
Input Capacitance (Ciss) (Max) @ Vds	1375 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)