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SIHD12N50E-GE3

Vishay Siliconix

Product No:

SIHD12N50E-GE3

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Package:

D-Pak

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Description:

MOSFET N-CH 550V 10.5A DPAK

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Mfr	Vishay Siliconix
Series	E
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	SIHD12
Operating Temperature	-55°C ~ 150°C (TA)
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Power Dissipation (Max)	114W (Tc)
Supplier Device Package	D-Pak
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Drain to Source Voltage (Vdss)	550 V
Input Capacitance (Ciss) (Max) @ Vds	886 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	10.5A (Tc)