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SIHB8N50D-GE3

Vishay Siliconix

Product No:

SIHB8N50D-GE3

Manufacturer:

Package:

TO-263 (D²Pak)

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Description:

MOSFET N-CH 500V 8.7A TO263

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Mfr	Vishay Siliconix
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Base Product Number	SIHB8
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	850mOhm @ 4A, 10V
Power Dissipation (Max)	156W (Tc)
Supplier Device Package	TO-263 (D²Pak)
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Drain to Source Voltage (Vdss)	500 V
Input Capacitance (Ciss) (Max) @ Vds	527 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	8.7A (Tc)