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SIHB33N60E-GE3

Vishay Siliconix

Product No:

SIHB33N60E-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 600V 33A D2PAK

Quantity:

Delivery:

Payment:

In Stock : 374

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.643

    $5.643

  • 10

    $5.0692

    $50.692

  • 100

    $4.153685

    $415.3685

  • 500

    $3.535957

    $1767.9785

  • 1000

    $2.982126

    $2982.126

  • 2000

    $2.833024

    $5666.048

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SIHB33N60E-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number SIHB33
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V
Power Dissipation (Max) 278W (Tc)
Supplier Device Package D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 3508 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)