Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHB24N80AE-GE3

Vishay Siliconix

Product No:

SIHB24N80AE-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 800V 21A D2PAK

Quantity:

Delivery:

Payment:

In Stock : 999

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.249

    $3.249

  • 10

    $2.7284

    $27.284

  • 100

    $2.20723

    $220.723

  • 500

    $1.961978

    $980.989

  • 1000

    $1.679952

    $1679.952

  • 2000

    $1.581854

    $3163.708

  • 5000

    $1.517625

    $7588.125

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

SIHB24N80AE-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number SIHB24
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 184mOhm @ 10A, 10V
Power Dissipation (Max) 208W (Tc)
Supplier Device Package D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V
Drain to Source Voltage (Vdss) 800 V
Input Capacitance (Ciss) (Max) @ Vds 1836 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)