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SIHB20N50E-GE3

Vishay Siliconix

Product No:

SIHB20N50E-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 500V 19A D2PAK

Quantity:

Delivery:

Payment:

In Stock : 2890

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.002

    $3.002

  • 10

    $2.6942

    $26.942

  • 100

    $2.2078

    $220.78

  • 500

    $1.879461

    $939.7305

  • 1000

    $1.585094

    $1585.094

  • 2000

    $1.505845

    $3011.69

  • 5000

    $1.449225

    $7246.125

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SIHB20N50E-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number SIHB20
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 184mOhm @ 10A, 10V
Power Dissipation (Max) 179W (Tc)
Supplier Device Package D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
Drain to Source Voltage (Vdss) 500 V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)