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SIE836DF-T1-E3

Vishay Siliconix

Product No:

SIE836DF-T1-E3

Manufacturer:

Package:

10-PolarPAK® (SH)

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Description:

MOSFET N-CH 200V 18.3A 10POLARPK

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Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	10-PolarPAK® (SH)
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.5V @ 250µA
Base Product Number	SIE836
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	130mOhm @ 4.1A, 10V
Power Dissipation (Max)	5.2W (Ta), 104W (Tc)
Supplier Device Package	10-PolarPAK® (SH)
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18.3A (Tc)