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SIE812DF-T1-GE3

Vishay Siliconix

Product No:

SIE812DF-T1-GE3

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Package:

10-PolarPAK® (L)

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Description:

MOSFET N-CH 40V 60A 10POLARPAK

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Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	10-PolarPAK® (L)
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Base Product Number	SIE812
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	2.6mOhm @ 25A, 10V
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Supplier Device Package	10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10 V
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	8300 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)