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SIDR626DP-T1-RE3

Vishay Siliconix

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SIDR626DP-T1-RE3

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PowerPAK® SO-8DC

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Description:

N-CHANNEL 60-V (D-S) MOSFET

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Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Product Status	Active
Vgs(th) (Max) @ Id	3.4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	1.7mOhm @ 20A, 10V
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Supplier Device Package	PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	5130 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	42.8A (Ta), 100A (Tc)