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SIDR610EP-T1-RE3

Vishay Siliconix

Product No:

SIDR610EP-T1-RE3

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Package:

PowerPAK® SO-8DC

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Description:

N-CHANNEL 200 V (D-S) 175C MOSFE

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Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	SIDR610
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	31.9mOhm @ 10A, 10V
Power Dissipation (Max)	7.5W (Ta), 150W (Tc)
Supplier Device Package	PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	1380 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C	8.9A (Ta), 39.6A (Tc)