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SIDR608EP-T1-RE3

Vishay Siliconix

Product No:

SIDR608EP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8DC

Batch:

-

Datasheet:

Description:

N-CHANNEL 45 V (D-S) 175C MOSFET

Quantity:

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SIDR608EP-T1-RE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) +20V, -16V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 1.2mOhm @ 20A, 10V
Power Dissipation (Max) 7.5W (Ta), 125W (Tc)
Supplier Device Package PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs 167 nC @ 10 V
Drain to Source Voltage (Vdss) 45 V
Input Capacitance (Ciss) (Max) @ Vds 8900 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 56A (Ta), 228A (Tc)