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SIDR5102EP-T1-RE3

Vishay Siliconix

Product No:

SIDR5102EP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8DC

Batch:

-

Datasheet:

Description:

N-CHANNEL 100 V (D-S) 175C MOSFE

Quantity:

Delivery:

Payment:

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SIDR5102EP-T1-RE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET® Gen V
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number SIDR5102
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 4.1mOhm @ 20A, 10V
Power Dissipation (Max) 7.5W (Ta), 150W (Tc)
Supplier Device Package PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C 28.2A (Ta), 126A (Tc)