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SIDR104AEP-T1-RE3

Vishay Siliconix

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SIDR104AEP-T1-RE3

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PowerPAK® SO-8DC

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Description:

N-CHANNEL 100 V (D-S) 175C MOSFE

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Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	6.1mOhm @ 15A, 10V
Power Dissipation (Max)	6.5W (Ta), 120W (Tc)
Supplier Device Package	PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	3250 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C	21.1A (Ta), 90.5A (Tc)