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SIDC06D120H8X1SA2

Infineon Technologies

Product No:

SIDC06D120H8X1SA2

Manufacturer:

Infineon Technologies

Package:

Sawn on foil

Batch:

-

Datasheet:

-

Description:

DIODE GP 1.2KV 7.5A WAFER

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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SIDC06D120H8X1SA2 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Speed Standard Recovery >500ns, > 200mA (Io)
Series -
Package Bulk
Technology Standard
Mounting Type Surface Mount
Package / Case Die
Product Status Active
Base Product Number SIDC06D120
Capacitance @ Vr, F -
Supplier Device Package Sawn on foil
Current - Reverse Leakage @ Vr 27 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 7.5A
Operating Temperature - Junction -40°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.97 V @ 7.5 A