Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI8809EDB-T2-E1
Vishay Siliconix
Product No:
SI8809EDB-T2-E1
Manufacturer:
Package:
4-Microfoot
Batch:
-
Datasheet:
Description:
MOSFET P-CH 20V 1.9A MICROFOOT
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
SI8809EDB-T2-E1 - Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 4-XFBGA |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Base Product Number | SI8809 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Supplier Device Package | 4-Microfoot |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 8 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.94 (Ta) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Information
Subscribe
Quick Links
