Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI5509DC-T1-GE3

Vishay Siliconix

Product No:

SI5509DC-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

1206-8 ChipFET™

Batch:

-

Datasheet:

Description:

MOSFET N/P-CH 20V 6.1A 1206-8

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

SI5509DC-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 4.5W
Configuration N and P-Channel
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 250µA
Base Product Number SI5509
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 52mOhm @ 5A, 4.5V
Supplier Device Package 1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 5V
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.1A, 4.8A