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SI5509DC-T1-GE3
Vishay Siliconix
Product No:
SI5509DC-T1-GE3
Manufacturer:
Package:
1206-8 ChipFET™
Batch:
-
Datasheet:
Description:
MOSFET N/P-CH 20V 6.1A 1206-8
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
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SI5509DC-T1-GE3 - Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 4.5W |
| Configuration | N and P-Channel |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Base Product Number | SI5509 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 5A, 4.5V |
| Supplier Device Package | 1206-8 ChipFET™ |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A, 4.8A |
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