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SI4922BDY-T1-GE3

Vishay Siliconix

Product No:

SI4922BDY-T1-GE3

Manufacturer:

Package:

8-SOIC

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Datasheet:

Description:

MOSFET 2N-CH 30V 8A 8-SOIC

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Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Technology	MOSFET (Metal Oxide)
FET Feature	-
Power - Max	3.1W
Configuration	2 N-Channel (Dual)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Product Status	Active
Vgs(th) (Max) @ Id	1.8V @ 250µA
Base Product Number	SI4922
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	16mOhm @ 5A, 10V
Supplier Device Package	8-SOIC
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Drain to Source Voltage (Vdss)	30V
Input Capacitance (Ciss) (Max) @ Vds	2070pF @ 15V
Current - Continuous Drain (Id) @ 25°C	8A