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SI4900DY-T1-E3

Vishay Siliconix

Product No:

SI4900DY-T1-E3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Batch:

-

Datasheet:

Description:

MOSFET 2N-CH 60V 5.3A 8-SOIC

Quantity:

Delivery:

Payment:

In Stock : 8708

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.14

    $1.14

  • 10

    $1.01935

    $10.1935

  • 100

    $0.794485

    $79.4485

  • 500

    $0.656298

    $328.149

  • 1000

    $0.51813

    $518.13

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SI4900DY-T1-E3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 3.1W
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Base Product Number SI4900
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 58mOhm @ 4.3A, 10V
Supplier Device Package 8-SOIC
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.3A