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SI4160DY-T1-GE3

Vishay Siliconix

Product No:

SI4160DY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Batch:

-

Datasheet:

Description:

MOSFET N-CH 30V 25.4A 8SO

Quantity:

Delivery:

Payment:

In Stock : 1860

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.235

    $1.235

  • 10

    $1.1039

    $11.039

  • 100

    $0.8607

    $86.07

  • 500

    $0.71098

    $355.49

  • 1000

    $0.561308

    $561.308

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SI4160DY-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 250µA
Base Product Number SI4160
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.9mOhm @ 15A, 10V
Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc)
Supplier Device Package 8-SOIC
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 2071 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 25.4A (Tc)