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SI4100DY-T1-GE3

Vishay Siliconix

Product No:

SI4100DY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Batch:

-

Datasheet:

Description:

MOSFET N-CH 100V 6.8A 8SO

Quantity:

Delivery:

Payment:

In Stock : 5380

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.2065

    $1.2065

  • 10

    $1.0754

    $10.754

  • 100

    $0.838565

    $83.8565

  • 500

    $0.692759

    $346.3795

  • 1000

    $0.546915

    $546.915

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SI4100DY-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Base Product Number SI4100
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 63mOhm @ 4.4A, 10V
Power Dissipation (Max) 2.5W (Ta), 6W (Tc)
Supplier Device Package 8-SOIC
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)