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SI3909DV-T1-E3
Vishay Siliconix
Product No:
SI3909DV-T1-E3
Manufacturer:
Package:
6-TSOP
Batch:
-
Datasheet:
Description:
MOSFET 2P-CH 20V 6TSOP
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
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SI3909DV-T1-E3 - Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.15W |
| Configuration | 2 P-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 500mV @ 250µA (Min) |
| Base Product Number | SI3909 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.8A, 4.5V |
| Supplier Device Package | 6-TSOP |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Current - Continuous Drain (Id) @ 25°C | - |
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