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SI3900DV-T1-GE3

Vishay Siliconix

Product No:

SI3900DV-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

6-TSOP

Batch:

-

Datasheet:

Description:

MOSFET 2N-CH 20V 2A 6-TSOP

Quantity:

Delivery:

Payment:

In Stock : 2871

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.8835

    $0.8835

  • 10

    $0.7923

    $7.923

  • 100

    $0.61788

    $61.788

  • 500

    $0.510454

    $255.227

  • 1000

    $0.40299

    $402.99

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SI3900DV-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 830mW
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Base Product Number SI3900
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 125mOhm @ 2.4A, 4.5V
Supplier Device Package 6-TSOP
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds -
Current - Continuous Drain (Id) @ 25°C 2A