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SI2365EDS-T1-GE3

Vishay Siliconix

Product No:

SI2365EDS-T1-GE3

Manufacturer:

Package:

SOT-23-3 (TO-236)

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Description:

MOSFET P-CH 20V 5.9A TO236

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Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Base Product Number	SI2365
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	32mOhm @ 4A, 4.5V
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Supplier Device Package	SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 8 V
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	5.9A (Tc)