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SI2333DS-T1-GE3

Vishay Siliconix

Product No:

SI2333DS-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

-

Datasheet:

Description:

MOSFET P-CH 12V 4.1A SOT23-3

Quantity:

Delivery:

Payment:

In Stock : 3779

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.7885

    $0.7885

  • 10

    $0.70775

    $7.0775

  • 100

    $0.55176

    $55.176

  • 500

    $0.455772

    $227.886

  • 1000

    $0.359812

    $359.812

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SI2333DS-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Base Product Number SI2333
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 32mOhm @ 5.3A, 4.5V
Power Dissipation (Max) 750mW (Ta)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V
Drain to Source Voltage (Vdss) 12 V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)