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SI2325DS-T1-GE3

Vishay Siliconix

Product No:

SI2325DS-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

-

Datasheet:

Description:

MOSFET P-CH 150V 530MA SOT23-3

Quantity:

Delivery:

Payment:

In Stock : 23750

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.9215

    $0.9215

  • 10

    $0.8208

    $8.208

  • 100

    $0.640015

    $64.0015

  • 500

    $0.528694

    $264.347

  • 1000

    $0.417382

    $417.382

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SI2325DS-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Base Product Number SI2325
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.2Ohm @ 500mA, 10V
Power Dissipation (Max) 750mW (Ta)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Drain to Source Voltage (Vdss) 150 V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 530mA (Ta)