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SI2324DS-T1-GE3

Vishay Siliconix

Product No:

SI2324DS-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 100V 2.3A SOT23-3

Quantity:

Delivery:

Payment:

In Stock : 50196

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.589

    $0.589

  • 10

    $0.5035

    $5.035

  • 100

    $0.376105

    $37.6105

  • 500

    $0.295526

    $147.763

  • 1000

    $0.228361

    $228.361

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SI2324DS-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Vgs(th) (Max) @ Id 2.9V @ 250µA
Base Product Number SI2324
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 234mOhm @ 1.5A, 10V
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)