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SI2312CDS-T1-BE3

Vishay Siliconix

Product No:

SI2312CDS-T1-BE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

-

Datasheet:

Description:

N-CHANNEL 20-V (D-S) MOSFET

Quantity:

Delivery:

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SI2312CDS-T1-BE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 31.8mOhm @ 5A, 4.5V
Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V
Drain to Source Voltage (Vdss) 20 V
Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C 5A (Ta), 6A (Tc)