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SI2312BDS-T1-GE3

Vishay Siliconix

Product No:

SI2312BDS-T1-GE3

Manufacturer:

Package:

SOT-23-3 (TO-236)

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Description:

MOSFET N-CH 20V 3.9A SOT23-3

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Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Product Status	Active
Vgs(th) (Max) @ Id	850mV @ 250µA
Base Product Number	SI2312
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	31mOhm @ 5A, 4.5V
Power Dissipation (Max)	750mW (Ta)
Supplier Device Package	SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)