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SI2312BDS-T1-BE3

Vishay Siliconix

Product No:

SI2312BDS-T1-BE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

-

Datasheet:

Description:

N-CHANNEL 20-V (D-S) MOSFET

Quantity:

Delivery:

Payment:

In Stock : 760

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5225

    $0.5225

  • 10

    $0.4465

    $4.465

  • 100

    $0.31008

    $31.008

  • 500

    $0.242117

    $121.0585

  • 1000

    $0.196792

    $196.792

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SI2312BDS-T1-BE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Vgs(th) (Max) @ Id 850mV @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 4.5V
Power Dissipation (Max) 750mW (Ta)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
Drain to Source Voltage (Vdss) 20 V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)