Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI2307BDS-T1-E3

Vishay Siliconix

Product No:

SI2307BDS-T1-E3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

-

Datasheet:

Description:

MOSFET P-CH 30V 2.5A SOT23-3

Quantity:

Delivery:

Payment:

In Stock : 13374

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.589

    $0.589

  • 10

    $0.5016

    $5.016

  • 100

    $0.348745

    $34.8745

  • 500

    $0.272308

    $136.154

  • 1000

    $0.221331

    $221.331

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

SI2307BDS-T1-E3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Base Product Number SI2307
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 78mOhm @ 3.2A, 10V
Power Dissipation (Max) 750mW (Ta)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)