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SI2303BDS-T1-GE3

Vishay Siliconix

Product No:

SI2303BDS-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Batch:

-

Datasheet:

Description:

MOSFET P-CH 30V 1.49A SOT23-3

Quantity:

Delivery:

Payment:

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SI2303BDS-T1-GE3 - Product Information

Parameter Info

User Guide

Mfr Vishay Siliconix
Series -
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Obsolete
Vgs(th) (Max) @ Id 3V @ 250µA
Base Product Number SI2303
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 200mOhm @ 1.7A, 10V
Power Dissipation (Max) 700mW (Ta)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 1.49A (Ta)