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SCTW35N65G2VAG

STMicroelectronics

Product No:

SCTW35N65G2VAG

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Package:

HiP247™

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Description:

SICFET N-CH 650V 45A HIP247

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Mfr	STMicroelectronics
Series	Automotive, AEC-Q101
Package	Tube
FET Type	N-Channel
Vgs (Max)	+22V, -10V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Base Product Number	SCTW35
Operating Temperature	-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
Power Dissipation (Max)	240W (Tc)
Supplier Device Package	HiP247™
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)