Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCTL90N65G2V

STMicroelectronics

Product No:

SCTL90N65G2V

Manufacturer:

Package:

PowerFlat™ (8x8) HV

Batch:

Datasheet:

Description:

SILICON CARBIDE POWER MOSFET 650

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	STMicroelectronics
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	+22V, -10V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	24mOhm @ 40A, 18V
Power Dissipation (Max)	935W (Tc)
Supplier Device Package	PowerFlat™ (8x8) HV
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)