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S1JLHM2G

Taiwan Semiconductor Corporation

Product No:

S1JLHM2G

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Sub SMA

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Description:

DIODE GEN PURP 600V 1A SUB SMA

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Mfr	Taiwan Semiconductor Corporation
Speed	Standard Recovery >500ns, > 200mA (Io)
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Technology	Standard
Mounting Type	Surface Mount
Package / Case	DO-219AB
Product Status	Active
Base Product Number	S1J
Capacitance @ Vr, F	9pF @ 4V, 1MHz
Supplier Device Package	Sub SMA
Reverse Recovery Time (trr)	1.8 µs
Current - Reverse Leakage @ Vr	5 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io)	1A
Operating Temperature - Junction	-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A