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RS1E350BNTB1

Rohm Semiconductor

Product No:

RS1E350BNTB1

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Package:

8-HSOP

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Description:

NCH 30V 80A POWER MOSFET: RS1E35

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Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Base Product Number	RS1E
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	1.7mOhm @ 35A, 10V
Power Dissipation (Max)	3W (Ta), 35W (Tc)
Supplier Device Package	8-HSOP
Gate Charge (Qg) (Max) @ Vgs	185 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	7900 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	35A (Ta), 80A (Tc)