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RS1E200GNTB

Rohm Semiconductor

Product No:

RS1E200GNTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSOP

Batch:

-

Datasheet:

Description:

MOSFET N-CH 30V 20A 8HSOP

Quantity:

Delivery:

Payment:

In Stock : 2470

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.779

    $0.779

  • 10

    $0.684

    $6.84

  • 100

    $0.524305

    $52.4305

  • 500

    $0.414504

    $207.252

  • 1000

    $0.331607

    $331.607

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RS1E200GNTB - Product Information

Parameter Info

User Guide

Mfr Rohm Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Base Product Number RS1E
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V
Power Dissipation (Max) 3W (Ta), 25.1W (Tc)
Supplier Device Package 8-HSOP
Gate Charge (Qg) (Max) @ Vgs 16.8 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)