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RQ3E120GNTB

Rohm Semiconductor

Product No:

RQ3E120GNTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 30V 12A 8HSMT

Quantity:

Delivery:

Payment:

In Stock : 8655

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.475

    $0.475

  • 10

    $0.4104

    $4.104

  • 100

    $0.30628

    $30.628

  • 500

    $0.240635

    $120.3175

  • 1000

    $0.185953

    $185.953

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RQ3E120GNTB - Product Information

Parameter Info

User Guide

Mfr Rohm Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Base Product Number RQ3E120
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 8.8mOhm @ 12A, 10V
Power Dissipation (Max) 2W (Ta), 16W (Tc)
Supplier Device Package 8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)