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RQ3E100BNTB

Rohm Semiconductor

Product No:

RQ3E100BNTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSMT (3.2x3)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 30V 10A 8HSMT

Quantity:

Delivery:

Payment:

In Stock : 96650

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.3895

    $0.3895

  • 10

    $0.3306

    $3.306

  • 100

    $0.24719

    $24.719

  • 500

    $0.194199

    $97.0995

  • 1000

    $0.150062

    $150.062

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RQ3E100BNTB - Product Information

Parameter Info

User Guide

Mfr Rohm Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Base Product Number RQ3E100
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 10.4mOhm @ 10A, 10V
Power Dissipation (Max) 2W (Ta)
Supplier Device Package 8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)