Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RN1968(TE85L,F)

Toshiba Semiconductor and Storage

Product No:

RN1968(TE85L,F)

Manufacturer:

Package:

US6

Batch:

Datasheet:

Description:

TRANS 2NPN PREBIAS 0.2W US6

Quantity:

Delivery:

Payment:

In Stock : 3000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Power - Max	200mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Product Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual)
Base Product Number	RN1968
Resistor - Base (R1)	22kOhms
Frequency - Transition	250MHz
Supplier Device Package	US6
Resistor - Emitter Base (R2)	47kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50V