Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RN1710JE(TE85L,F)

Toshiba Semiconductor and Storage

Product No:

RN1710JE(TE85L,F)

Manufacturer:

Package:

ESV

Batch:

Datasheet:

Description:

NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=

Quantity:

Delivery:

Payment:

In Stock : 3863

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Product Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Base Product Number	RN1710
Resistor - Base (R1)	4.7kOhms
Frequency - Transition	250MHz
Supplier Device Package	ESV
Resistor - Emitter Base (R2)	-
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50V