Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RJK03E1DNS-00#J5

Renesas Electronics America Inc

Product No:

RJK03E1DNS-00#J5

Manufacturer:

Package:

8-HWSON (3.3x3.3)

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : 80000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Renesas Electronics America Inc
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Product Status	Active
Vgs(th) (Max) @ Id	-
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	6.9mOhm @ 12.5A, 10V
Power Dissipation (Max)	15W (Tc)
Supplier Device Package	8-HWSON (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs	10.7 nC @ 4.5 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C	25A (Ta)