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RJK0331DPB-01#J0

Renesas Electronics America Inc

Product No:

RJK0331DPB-01#J0

Package:

LFPAK

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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RJK0331DPB-01#J0 - Product Information

Parameter Info

User Guide

Mfr Renesas Electronics America Inc
Series -
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Product Status Active
Vgs(th) (Max) @ Id -
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.4mOhm @ 20A, 10V
Power Dissipation (Max) 50W (Tc)
Supplier Device Package LFPAK
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 4.5 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 3380 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)