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RJ1P07CBHTL1

Rohm Semiconductor

Product No:

RJ1P07CBHTL1

Manufacturer:

Rohm Semiconductor

Package:

TO-263AB

Batch:

-

Datasheet:

-

Description:

NCH 100V 120A, TO-263AB, POWER M

Quantity:

Delivery:

Payment:

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RJ1P07CBHTL1 - Product Information

Parameter Info

User Guide

Mfr Rohm Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 5.1mOhm @ 70A, 10V
Power Dissipation (Max) 135W (Ta)
Supplier Device Package TO-263AB
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 4650 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 120A (Ta), 70A (Tc)