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RFW2N06RLE

Harris Corporation

Product No:

RFW2N06RLE

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Package:

4-DIP, Hexdip

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Description:

N-CHANNEL POWER MOSFET

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Mfr	Harris Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	+10V, -5V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	4-DIP (0.300", 7.62mm)
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	200mOhm @ 2A, 5V
Power Dissipation (Max)	1.09W (Tc)
Supplier Device Package	4-DIP, Hexdip
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	535 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)