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RFP4N35

Harris Corporation

Product No:

RFP4N35

Manufacturer:

Package:

TO-220-3

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Mfr	Harris Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	2Ohm @ 2A, 10V
Power Dissipation (Max)	75W (Tc)
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	350 V
Input Capacitance (Ciss) (Max) @ Vds	750 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)