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RFP2N10

Harris Corporation

Product No:

RFP2N10

Manufacturer:

Harris Corporation

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

N-CHANNEL, MOSFET

Quantity:

Delivery:

Payment:

In Stock : 1323

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1323

    $0.2755

    $364.4865

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RFP2N10 - Product Information

Parameter Info

User Guide

Mfr Harris Corporation
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.05Ohm @ 2A, 5V
Power Dissipation (Max) 25W (Tc)
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)