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RFN10BGE6STL

Rohm Semiconductor

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RFN10BGE6STL

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Package:

TO-252GE

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Description:

DIODE GEN PURP 600V 10A TO252GE

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Mfr	Rohm Semiconductor
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	-
Package	Tape & Reel (TR)
Technology	Standard
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Base Product Number	RFN10
Capacitance @ Vr, F	-
Supplier Device Package	TO-252GE
Reverse Recovery Time (trr)	50 ns
Current - Reverse Leakage @ Vr	10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io)	10A
Operating Temperature - Junction	150°C
Voltage - Forward (Vf) (Max) @ If	1.55 V @ 10 A