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RFD7N10LE

Harris Corporation

Product No:

RFD7N10LE

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Package:

TO-220-3

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Description:

N-CHANNEL POWER MOSFET

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In Stock : 5942

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Mfr	Harris Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	+10V, -8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	300mOhm @ 7A, 5V
Power Dissipation (Max)	47W (Tc)
Supplier Device Package	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)