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RFD4N06L

Harris Corporation

Product No:

RFD4N06L

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Package:

I-Pak

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Description:

N-CHANNEL POWER MOSFET

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Mfr	Harris Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±10V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	600mOhm @ 1A, 5V
Power Dissipation (Max)	30W (Tc)
Supplier Device Package	I-Pak
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)